Publication (林楚軒Chu-Hsuan Lin)

Publication (林楚軒Chu-Hsuan Lin)

最新版本可連結: http://sys.ndhu.edu.tw/RD/TeacherTreasury/tlist.aspx?tcher=11283

 

一、期刊論文:

A、具匿名審查制度之期刊

 

1.       Ching-Kuei Shih, Yu-Tang Ciou, Chun-Wei Chiu, Yu-Ru Li, Jia-Syun Jheng, Yen-Chun Chen and Chu-Hsuan Lin*, “Effects of Different Oxidation Degrees of Graphene Oxide on P-Type and N-Type Si Heterojunction Photodetectors,” nanomaterials, Vol.8, pp.491, July 2018. (SCI, 2017 IF=3.504, Ranking=71/284=25%, Category=MATERIALS SCIENCE, MULTIDISCIPLINARY)

 

2.       Hao-Tse Hsiao, I-Cheng Yao, I-Chih Ni, Shien-Der Tzeng, Wei-Fan Lin, Bo-Yu Lin and Chu-Hsuan Lin*, “Gold-Nanoparticle-Coated Ge MIS Photodiodes,” IEEE Journal of the Electron Devices Society, Vol. 6, no. 1, pp. 95-99, 2017. (SCI, EI, 2016 Impact Factor: 3.141, Ranking: 56/262 = 21.4% in ENGINEERING, ELECTRICAL & ELECTRONIC)

3.       Liang-Chun Chen, Chun-Tien Yu, Yu-Chang Peng, Jing-Jie Hung, Hung-Ming Chang, Shien-Der Tzeng, Chih-Ming Wang, Chun-Chieh Lin, and Chu-Hsuan Lin*, “Antireflection with graphene oxide,” Opt. Mater. Express, Vol. 6, No. 1, pp. 8-18, Jan. 2016 (SCI, EI, 2015 Impact Factor: 2.657, Ranking: 19/90 = 21.1 % in OPTICS)

4.       Yun-Hsuan Chang, Chih-Ming Wang, Yu-Kuei Hsu, Yi-Hao Pai, Jia-Yu Lin, and Chu-Hsuan Lin*, “Graphene oxide as the passivation layer for CuxO photocatalyst on a plasmonic Au film and the corresponding photoluminescence study,” Opt. Express, Vol. 23, No. 19, pp. A1245-A1252, Aug. 2015 (SCI, EI, 2014 Impact Factor: 3.488, Ranking: 9/86 = 10.5 % in OPTICS)

 

5.       Hsiao-Yu Wu, Chun-Chieh Lin*, and Chu-Hsuan Lin, “Characteristics of graphene-oxide-based flexible and transparent resistive switching memory,” Ceram. Int., Vol. 41, Supplement 1, pp. S823-S828, July 2015. (SCI, EI, 2014 Impact Factor: 2.605, Ranking: 4/26 = 15.4 % in MATERIALS SCIENCE, CERAMICS)

6.       Wen-Tzu Hsu, Zong-Sian Tsai, Liang-Chun Chen, Guan-Yu Chen, Chun-Chieh Lin, Mei-Hsin Chen, Jenn-Ming Song and Chu-Hsuan Lin*, “Passivation ability of graphene oxide demonstrated by two-different-metal solar cells,” Nanoscale Res. Lett. Vol. 9, 696, Dec. 2014. (SCI, EI, 2013 Impact Factor: 2.481, Ranking: 31/136 = 22.8 % in PHYSICS, APPLIED)

 

7.       Hao-Tse Hsiao, I-Chih Ni, Shien-Der Tzeng, Wei-Fan Lin and Chu-Hsuan Lin*, “The n-type Ge photodetectors with gold nanoparticles deposited to enhance the responsivity,” Nanoscale Res. Lett. Vol. 9, 640, Nov. 2014. (SCI, EI, 2013 Impact Factor: 2.481, Ranking: 31/136 = 22.8 % in PHYSICS, APPLIED)

8.       Chun-Chieh Lin*, Hsiao-Yu Wu, Nian-Cin Lin, and Chu-Hsuan Lin, “Graphene-Oxide-Based Resistive Switching Device for Flexible Nonvolatile Memory Application,” Jpn. J. Appl. Phys. Vol. 53, no. 5S1, p. 05FD03, March 2014. (SCI, EI, 2013 Impact Factor: 1.057, Ranking: 90/136 = 66% in PHYSICS, APPLIED)

 

9.       Chu-Hsuan Lin*, Wei-Ting Yeh, Mei-Hsin Chen, “Metal-insulator-semiconductor photodetectors with different coverage ratios of graphene oxide,” IEEE J. Sel. Top. Quantum Electron. Vol. 20, no. 1, pp. 25-29, Jan.-Feb. 2014. (SCI, EI, 2013 Impact Factor: 3.465, Ranking: 21/248 = 8.5% in ENGINEERING, ELECTRICAL & ELECTRONIC)

10.    Chun-You Wei, Chu-Hsuan Lin*, Hao-Tse Hsiao, Po-Chuan Yang, Chih-Ming Wang and Yen-Chih Pan, “Efficiency Improvement of HIT Solar Cells on p-Type Si Wafers,” Materials Vol. 6, no. 11, pp. 5440-5446, Nov. 2013. (SCI, 2012 Impact Factor: 2.247, Ranking: 54/239 = 22.6% in MATERIALS SCIENCE, MULTIDISCIPLINARY)

11.    C.-H. Lin*, T.-H. Tsai, C.-M. Wang, and W.-T. Yeh, “Photodetectors with An HIT Structure on p-type Crystalline Si Wafers,Appl. Surf. Sci. Vol. 275, pp. 269-272, June 2013. (SCI, EI, 2012 Impact Factor: 2.112, Ranking: 2/17 = 11.8% in MATERIALS SCIENCE, COATINGS & FILMS)

12.    Wen-Ting Kung, Yi-Hao Pai, Yu-Kuei Hsu, Chu-Hsuan Lin, and Chih-Ming Wang*, “Surface Plasmon assisted CuxO photocatalyst for pure water splitting,” Opt. Express, Vol. 21, No. S2, pp. A221-A228, March 2013 (SCI, EI, 2012 Impact Factor: 3.546, Ranking: 4/79 = 5.1% in OPTICS)

13.    C.-H. Lin*; W.-T. Hsu; C.-H. Tai, “Single Grain Boundary Modeling and Design of Microcrystalline Si Solar Cells,” Materials Vol. 6, no. 1, pp. 291-298, Jan. 2013. (SCI, 2012 Impact Factor: 2.247, Ranking: 54/239 = 22.6% in MATERIALS SCIENCE, MULTIDISCIPLINARY)

14.    Chu-Hsuan Lin*, Wei-Ting Yeh, Chun-Hui Chan and Chun-Chieh Lin, “Influence of Graphene Oxide on Metal-Insulator-Semiconductor Tunneling Diodes,” Nanoscale Res. Lett. Vol. 7, 343, Augest 2012. (SCI, EI, 2011 Impact Factor: 2.726, Ranking: 23/125 = 18.4 % in PHYSICS, APPLIED)

15.    Chun-Chieh Lin*, Yi-Peng Chang, Huei-Bo Lin, and Chu-Hsuan Lin, “Effect of non-lattice oxygen on ZrO2-based resistive switching memory,” Nanoscale Res. Lett., Vol. 7, p. 187, March 2012. (SCI, EI, 2010 Impact Factor: 2.560)

16.    Cheng-Hung Tai, Chu-Hsuan Lin*, Chih-Ming Wang, and Chun-Chieh Lin, “Three-Terminal Amorphous Silicon Solar Cells,” International Journal of Photoenergy, Vol. 2011, Article ID 813093, Sep. 2011. (SCI, 2010 Impact Factor: 1.345)

17.    Chun-You Wei, Chu-Hsuan Lin*, “Applications of the HIT Solar-Cell Structure on Photodetectors,”  Jpn. J. Appl. Phys., Vol. 50, No. 9, p. 09MA04, Sep. 2011. (SCI, EI, 2010 Impact Factor: 1.024)
 

18.    Y.-L. Shen, S.-Y. Chen, J.-M. Song*, T.-K. Chin, C.-H. Lin, and I.-G. Chen, “Direct growth of ultra-long platinum nanolawns on a semiconductor photocatalyst,” Nanoscale Res. Lett., Vol. 6, p. 380, May 2011. (SCI, EI, 2010 Impact Factor: 2.560)

19.    Z.-M. Chang, C.-H. Lin*, “Structure design for single crystalline film Si solar cells,” Thin Solid Films, Vol. 519, No. 15, pp. 5118-5121, May 2011. (SCI, EI, 2010 Impact Factor: 1.935)

20.    C.-H. Lin and C. W. Liu*, “Metal-Insulator-Semiconductor Photodetectors,” sensors, Vol. 10, No.10, pp. 8797-8826, Sep. 2010. (SCI, 2009 Impact Factor: 1.821)

21.    C.-H. Lin*, “Si/Ge/Si Double Heterojunction Solar Cells,” Thin Solid Films, Vol. 518, pp. S255-S258, Jan. 2010. (SCI, EI, 2008 Impact Factor: 1.884)

 

22.    C.-H. Lin* and C. W. Liu, “Metal-Oxide-Semiconductor SiGe/Si Quantum Dot Infrared Photodetectors with Delta Doping in Different Positions,” Thin Solid Films, Vol. 518, pp. S237-S240, Jan. 2010. (SCI, EI, 2008 Impact Factor: 1.884)

 

23.    W. S. Ho, Y.-H. Dai, Y. Deng, C.-H. Lin, Y.-Y. Chen, C.-H. Lee, and C. W. Liu*, “Flexible Ge-on-polyimide detectors, Appl. Phys. Lett., Vol. 94, No.26, p. 261107, July 2009. (SCI, EI, 2008 Impact Factor: 3.726)

 

24.    W. S. Ho, C.-H. Lin, T.-H. Cheng, W. W. Hsu, Y.-Y. Chen, P.-S. Kuo, and C. W. Liu*, Narrow-band metal-oxide-semiconductor photodetector, Appl. Phys. Lett., Vol. 94, No.6, p. 061114, Feb. 2009. (SCI, EI, 2008 Impact Factor: 3.726)

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25.    C.-H. Lin, Y.-J. Yang, E. Encinas, W.-Y. Chen, J.-J. Tsai, and C. W. Liu*, “Single Crystalline Film on Glass for Thin Film Solar Cells,J. Nanoscri. Nanotech. Vol. 9, No.6, p. 3622, June 2009. (SCI, EI, 2008 Impact Factor: 1.929)

26.    A. A. Abramov, C.-H. Lin, and C. W. Liu*, “Fano Interference in the Quantum Well-Quantum Dot System,International Journal of Nanoscience, Vol. 7, No. 4/5, pp. 181-186, 2008. (EI)

 

27.    C.-H. Lin, C.-Y. Yu, C.-C. Chang, C.-H. Lee, M. H. Liao, C.-Y. Peng, and C. W. Liu*, “SiGe/Si quantum dot infrared photodetectors with delta doping,IEEE Trans. Nanotech., Vol. 7, No. 5, pp. 558-564, Sep. 2008. (SCI, EI, 2007 Impact Factor: 2.110)

 

28.    P.-S. Kuo, C.-H. Lin, C.-Y. Peng, Y.-C. Fu, and C. W. Liu*, “Transport mechanism of SiGe dot MOS tunneling diodes, IEEE Electron Device Letters, Vol. 28, No. 7, pp. 596-598, July 2007. (SCI,EI, 2006 Impact Factor: 2.716)

 

29.    C.-H. Lin, Y.-T. Chiang, C.-C. Hsu, C.-H. Lee, C.-F. Huang, C.-H. Lai, T.-H. Cheng, and C. W. Liu*, Ge-on-glass Detectors, Appl. Phys. Lett., Vol. 91, No.4, p. 041105, July 2007. (SCI, EI, 2006 Impact Factor: 3.977)

30.    C.-H. Lin, C.-Y. Yu, C.-C. Chang, M. H. Liao, C.-Y. Peng, and C. W. Liu*, “Broadband SiGe/Si quantum dot infrared photodetector,J. Appl. Phys., Vol. 101, No. 3, p. 033117, Feb. 2007. (SCI, EI, 2006 Impact Factor: 2.316)

31.    C.-Y. Yu, C.-Y. Lee, C.-H. Lin, and C. W. Liu*, “Low-Temperature Fabrication and characterization of Ge-on-Insulator structures, Appl. Phys. Lett., Vol. 89, p. 101913, Sep. 2006. (SCI, EI, 2005 Impact Factor: 4.127)

32.    M. H. Liao, C.-Y. Yu, T.-H. Guo, C.-H. Lin, and C. W. Liu*, “Electroluminescence from the Ge quantum dot MOS tunneling diodes,IEEE Electron Device Letters, Vol. 27, No.4, pp. 252-254, Apr. 2006. (SCI, EI, 2005 Impact Factor: 2.825)

33.    C.-H. Lin, C.-Y. Yu, P.-S. Kuo, C.-C. Chang, T.-H. Kuo, and C. W. Liu*, “Delta-doped MOS Ge/Si Quantum Dot/Well Infrared Photodetector,” Thin Solid Films, Vol. 508, pp. 389-392, June 2006. (SCI, EI, 2005 Impact Factor: 1.569)

 

34.    B.-C. Hsu, C.-H. Lin, P.-S. Kuo, S. T. Chang, P. S. Chen, C. W. Liu*, J.-H. Lu, and C. H. Kuan, “Novel MIS Ge-Si Quantum-Dot Infrared Photodetectors,” IEEE Electron Device Letters, Vol. 25, No. 8, pp. 544-546, Aug. 2004. (SCI, EI, 2003 Impact Factor: 2.732)

 

 

 

 

二、專書及專書論文

 

1. 林楚軒, 劉致為, “矽鍺金氧半光子偵測器,” 科儀新知, 第二十九卷第四期, p. 31, 2008.

2. C.H. Tai, C.H. Lin*, “The Three Terminal Structure for Thick Microcrystalline Si Solar Cells,Thick Films: Properties, Technology and Applications, 2012.

 

 

三、研討會論文

 

B1: 國際學術會議論文 (REFEREED INTERNATIONAL CONFERENCE PAPERS)

1.       Hao-Tse Hsiao, I-Cheng Yao, I-Chih Ni, Shien-Der Tzeng, Wei-Fan Lin, Bo-Yu Lin, Chu-Hsuan Lin*, “Ge Photodiodes with Ultrahigh Responsivity,” in Proceedings of 11th International Conference on Nanophotonics (ICNP2018), Wrocław, Poland, July 2-6, 2018, p.91.
 

2.       Ching-Pao Sun, Yi-Chin Chen, Kuan-Yu Chen, Chu-Hsuan Lin*, “Passivation of Interdigitated Back Contact Solar Cells by Graphene Oxide,” Optics & Photonics Taiwan, the International Conference (OPTIC 2017), Kaohsiung, Taiwan, 7-9 December 2017, no. 0480.

 

3.       Yen-Chung Chen, Yu-Chang Peng, Ying-Jhe Yang, Chu-Hsuan Lin*, Siang-Jyun Jhan, De-Ren Yang, “The realization of nipip HIT photodetectors with optimized thickness of intrinsic a-Si,” Optics & Photonics Taiwan, the International Conference (OPTIC 2016), Taipei, Taiwan, 3-5 December 2016, no. 270378.

4.       Yang De-Ren, Yen-Chun Chen, Yu-chang Peng, Yu-Ru Li, Chu-Hsuan Lin*, “The anti-reflection study of IPA-etched solar cells with graphene oxide assisting,” Optics & Photonics Taiwan, the International Conference (OPTIC 2016), Taipei, Taiwan, 3-5 December 2016, no. 270396.

5.       Jhan-Yi You, Yen-Chun Chen, De-Ren Yang, Chu-Hsuan Lin*, “Reduction reaction for graphene-oxide coated on Al2O3 thin film,” Optics & Photonics Taiwan, the International Conference (OPTIC 2016), Taipei, Taiwan, 3-5 December 2016, no. 270734.

6.       Chu-Hsuan Lin*, Guan-Yu Chen, Cheng-Ya Yu, and Liang-Chun Chen, “The Potential of Graphene Oxide to Passivate Si Solar Cells,” Asia-Pacific International Congress on Engineering & Natural Sciences (APICENS), Okinawa, Japan, 2-4 August 2016, no. 1405.

 

7.       Ching-Kuei Shih, Yu-Tang Ciou, Chun-Wei Chiu, Yen-Chun Chen, and Chu-Hsuan Lin*, “Comparison of Si photodetectors with dense graphene oxide of different oxidation levels,” 9th  International Conference on Nanophotonics (ICNP 2016), Taipei, Taiwan, 21-25 March 2016, no. P-07-06.

8.       Jhan-Yi You, Guan-Yu Chen and Chu-Hsuan Lin*, “Lifetime study for graphene-oxide coated double polished p-type (100) Si,” Optics & Photonics Taiwan, the International Conference (OPTIC) 2015, Hsinchu, Taiwan, 4-6 December 2015, no. 2015-SAT-P0902-P003..

9.       Liang-Chun Chen, Chun-Tien Yu, Yu-Chang Peng, Shien-Der Tzeng, Chih-Ming Wang, Chun-Chieh Lin, and Chu-Hsuan Lin*, “Graphene Oxide as the Antireflection Etching Mask on Si,” 31st European Photovoltaic Solar Energy Conference and Exhibition (EU PVSEC 2015), Hamburg, Germany, 14-18 Sep. 2015, no. 775 (pp. 953-955 in Proceedings of 31st EU PVSEC).

10.    Wei-Fan Lin, Hao-Tse Hsiao, I-Chih Ni, Shien-Der Tzeng, and Chu-Hsuan Lin*, “MHA and DL-cysteine Modified AuNPs on n-type Ge Photodetectors,” Optics & Photonics Taiwan, the International Conference (OPTIC) 2014, Taichung, Taiwan, 4-5 December 2014, 2014-FRI-S0103-O003.

 

11.    Guan-Yu Chen, Liang-Jun Chen, Chu-Hsuan Lin*, “Enhancement of PN Si Solar Cells by Graphene Oxide,” 6th World Conference on Photovoltaic Energy Conversion (WCPEC-6), Kyoto, Japan, 23-27 November 2014, no. 1569975445.

 

12.    H.-T. Hsiao, Guan-Yu Chen, Yu-Chang Peng, Chu-Hsuan Lin*, “Amorphous Silicon Stacked to p-type Crystalline Germanium as Band Switchable Photodetectors,” International Electron Devices and Materials Symposium (IEDMS 2014), Hualien, Taiwan, 20-21November 2014, no. 1228.

 

13.    Chun-Wei Chiu and Chu-Hsuan Lin*, “Impact of Oxidation Levels of Graphene Oxide on Photo-to-Dark Ratios of Graphene Oxide/n-Si Heterojunctions,” International Electron Devices and Materials Symposium (IEDMS 2014), Hualien, Taiwan, 20-21November 2014, no. 1146.

 

14.    Yun-Hsuan Chang, Chu-Hsuan Lin*, “Graphene oxide/CuxO as photocatalysts for water splitting and the corresponding photoluminescence study,” 7th Vacuum and Surface Sciences Conference of Asia and Australia (VASSCAA-7), Hsinchu, Taiwan, 5-9 October 2014, no. PNS-003.

 

15.    Yun-Hsuan Chang, Chu-Hsuan Lin*, “Graphene oxide with different oxidation levels assisted CuxO as photocatalysts for water splitting,” International Conference on Global Research and Education, Inter-Academia 2014, Riga, Latvia, 10-12 September 2014, no. iAY 10.

 

16.    Wen-Tzu Hsu, Zong-Sian Tsai, Liang-Chun Chen, Chun-Chieh Lin, Mei-Hsin Chen, Chu-Hsuan Lin*, “Two-Different-Metal Solar Cells with Graphene Oxide,” 3rd International Symposium on Next-Generation Electronics (ISNE 2014), Taoyuan, Taiwan, 7-10 May 2014, no. 240232.

17.    Hao-Tse Hsiao, I-Chih Ni, Shien-Der Tzeng, Wei-Fan Lin, Chu-Hsuan Lin*, “The n-type Ge Photodetectors with Gold Nanoparticles Deposited to Enhance Responsivity,” 3rd International Symposium on Next-Generation Electronics (ISNE 2014), Taoyuan, Taiwan, 7-10 May 2014, no. 240138.

18.    Han-Tang Lee, Wang-Ying Lee, Chu-Hsuan Lin, Chun-Chieh Lin*, “Resistive Switching in Al/Al2O3/TiO2/Al Structural Device for Flexible Nonvolatile Memory Application,” 3rd International Symposium on Next-Generation Electronics (ISNE 2014), Taoyuan, Taiwan, 7-10 May 2014, no. 240235.

19.    Ching-Kuei Shih, Yu-Tang Ciou, and Chu-Hsuan Lin*, “Influence of oxidation levels of graphene oxide on MIS tunneling diodes,” IEEE Nanotechnology Materials and Devices Conference (IEEE-NMDC 2013), Tainan, Taiwan, 7-9 Oct. 2013, no. 1072.

20.    Liang-Chun Chen, Chun-Tien Yu, Shien-Der Tzeng, Chih-Ming Wang, and Chu-Hsuan Lin* “The achievement of anti-reflection via graphene oxide,” IEEE Nanotechnology Materials and Devices Conference (IEEE-NMDC 2013), Tainan, Taiwan, 7-9 Oct. 2013, no. 1191.

21.    Hsiao-Yu Wu, Nian-Chin Lin, Chun-Chieh Lin*, and Chu-Hsuan Lin, “Better performance of graphene oxide based flexible RRAM,”2013 JSAP-MRS Joint Symposia, Kyoto, Japan, 16-20 Sep. 2013, no. 20p-M8-1, p.41.

 

22.    H.-T. Hsiao, T.-Y. Kuo, C.-H. Lin*, “Modeling of the nipip HIT structure with the hole thermionic emission mechanism,5th IEEE International Nanoelectronics Conference (INEC 2013), Singapore, 2 - 4 Jan. 2013, pp. 428-430. (EI)

23.    C.-T. Yu and C.-H. Lin*, “Process-related surface morphology of graphene oxide,” Optics & Photonics Taiwan, International Conference 2012, Taipei, Taiwan, 6-8 Dec. 2012, no. OA-SA-MD3-(4a)-2, p. 79.

24.    T.-Y. Kuo, T.-H. Tsai, C.-H. Lin*, “Modeling of HIT solar cells including hole thermionic emission,” Optics & Photonics Taiwan, International Conference 2012, Taipei, Taiwan, 6-8 Dec. 2012, no. PI-FR-I-(3)-6, p. 129.

25.    C.-H. Lin* and W.-T. Yeh, “Photodetectors with A HIT Structure on p-type Crystalline Si Wafers,” 7th  International Conference on Surfaces, Coatings and Nanostructured Materials (NANOSMAT), Prague, Czech Republic 18-21 Sep. 2012, no. 74.

26.    C.-H. Chan and C.-H. Lin*, “Numerical modeling of micromorph and a-Si:H/uc-Si:H/Ge triple-junction solars cells,” 6th International Conference on Technological Advances of Thin Films & Surface Coatings (ThinFilms2012), Singapore, 14-17 July 2012, no. 2539.

27.    W.-T. Hsu, C.-H. Tai, C.-H. Lin*, “Numerical modelling of microcrystalline silicon solar cells,” 21st  International Photovoltaic Science and Engineering Conference (PVSEC-21), Fukuoka, Japan, 28 Nov.-02 Dec. 2011, no. 4D-2P-19.

28.    H.-T. Hsiao, C.-H. Lin*, “Voltage Tunable Visible/Near Infrared Photodetector based on Amorphous Si/Crystalline Ge Stacking,” International Photonics Conference (IPC2011), Tainan, Taiwan, 8-10 Dec. 2011, no. E-FR-V 3-4.

29.    C.-H. Chan, C.-H. Lin*, “Numerical modeling of microcrystalline silicon solar cells,” International Photonics Conference (IPC2011), Tainan, Taiwan, 8-10 Dec. 2011, no. I-SA-IX 6-4.

30.    C.-Y. Wei, C.-H. Lin*, C.-M. Wang, Y.-C. Pan, “Efficiency Improvement of HIT Solar Cells on p-type Si Wafers,” 7th International Conference on Silicon Epitaxy and Heterostructures (ICSI-7), Leuven, Belgium, 28 Aug.-01 Sep. 2011, no. 1096.

31.    J.-S. Huang, C.-H. Lin*, C.-M. Wang, Y.-C. Pan, “Numerical modeling of triple-junction a-Si:H/uc-Si:H/Ge solar cells,” 7th International Conference on Silicon Epitaxy and Heterostructures (ICSI-7), Leuven, Belgium, 28 Aug.-01 Sep. 2011, no. 1043.

32.    C.-C. Lin*, Y.-P. Chang, H.-B. Lin, C.-H. Lin, “Bipolar Resistive Switching in Al/ZrO2/Pt Device Fabricated at Room Temperature,” 4th IEEE International NanoElectronics Conference (2011 INEC), Taoyuan, Taiwan, 21-24 June 2011, no. 165. (EI)

33.    C.-H. Lin*, W.-T. Yeh, C.-H. Chan, C.-C. Lin, “Graphene Oxide for Metal-Insulator-Semiconductor Tunneling Diodes,” 4th IEEE International NanoElectronics Conference (2011 INEC), Taoyuan, Taiwan, 21-24 June 2011, no. 160. (EI)

34.    C.-Y. Wei and C.-H. Lin*, “Application of HIT Solar Cell on Photo-detectors,” International Symposium on Optical Memory (ISOM’10), Hualien, Taiwan, 24-28 Oct. 2010, pp. 138-139.

 

35.    C. H. Tai, C.-H. Lin*, C. M. Wang, C. C. Lin, “Three-terminal a-Si solar cells,” 2010 International Conference on Solid State Devices and Materials (SSDM2010), Tokyo, Japan, 22-24 Sep. 2010, no. I-9-4.

36.    Z.-M. Chang and C.-H. Lin*, “Thin Film Single Crystalline Si Solar Cells with Three Terminal Structure,” 5th International Conference on Technological Advances of Thin Films & Surface Coatings (ThinFilms2010), Harbin, China, 11-14 July 2010, pp. 303-304.

 

37.    C.-H. Tai and C.-H. Lin*, “Three-Terminal Microcrystalline Silicon Solar Cell,” 37th International Conference on Metallurgical Coatings and Thin Films (ICMCTF 2010), San Diego, CA, USA, 26-30 Apr. 2010, no. 422.

38.    Z.-M. Chang and C.-H. Lin*, “Structure Design for Single Crystalline Film Si Solar Cells,” 2009 International Thin Films Conference (TACT 2009), Taipei, Taiwan, 14-16 Dec. 2009, no. A120-O.

 

39.    C.-H. Tai and C.-H. Lin*, “Three-terminal amorphous silicon solar cell,” 2009 International Thin Films Conference (TACT 2009), Taipei, Taiwan, 14-16 Dec. 2009, no. A092-O.

 

40.    C.-H. Lin*, “Si/Ge/Si Double Heterojunction Solar Cells,” 6th International Conference on Silicon Epitaxy and Heterostructures (ICSI-6), Los Angeles, California, USA, 17-22 May 2009, p. 131.

 

41.    C.-H. Lin*, and C. W. Liu, “Relation between Currents and Positions of Delta-Doped Layers in SiGe QDIPs,” 6th International Conference on Silicon Epitaxy and Heterostructures (ICSI-6), Los Angeles, California, USA, 17-22 May 2009, p. 113.

 

42.    (invited) C.-H. Lin*, “Single Crystalline Film on Glass for Detectors and Solar Cells,” 2008 International Electron Devices and Materials Symposium (IEDMS), Taichung, Taiwan, 28-29 Nov. 2008, p.32.

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43.    W. S. Ho, C.-H. Lin, P.-S. Kuo, W. W. Hsu, T.-H. Cheng, Y.-Y Chen and C. W. Liu, “Metal Oxide Semiconductor UV Sensor,” 7th IEEE Conference on Sensors, Lecce, Italy, 26-29 Oct. 2008, pp. 1584 - 1587.

 

44.    W. S. Ho, Y.-H. Dai, Y. Deng, C.-H. Lin, C.-H. Lee, C. W. Liu, "Flexible Ge-on-Polyimide Photodetector," 4th International SiGe Technology and Device Meeting (ISTDM), Hsinchu, Taiwan, 11-14 May 2008, no. Tue-S6-04.

45.    C.-H. Lin, C.-H. Lee, Y.-T. Chiang, C.-C. Hsu, Y. Deng, Y.-H. Dai, and C. W. Liu, “Ge-on-Polyimide Photodetector,” International Symposium for Flexible Electronics and Display (ISFED), Hsinchu, Taiwan, 17-18 Dec. 2007, pp. 99-100.

 

46.    P.-S. Kuo, C.-H. Lin, C.-Y. Peng, Y.-C. Fu, C. W. Liu, “Si/SiGe/Si Quantum well Schottky barrier diodes,” 5th International Symposium on Control of Semiconductor Interfaces (ISCSI-V), Tokyo, Japan, 12-14 Nov. 2007, pp. 205 - 206.

 

47.    P.-S. Kuo, C.-H. Lin, C.-Y. Peng, Y.-C. Fu, and C. W. Liu, “Novel Transport mechanism of SiGe dot MOS tunneling diodes, 7th IEEE International Conference on Nanotechnology (IEEE-NANO), Hong Kong, 2-5 Aug. 2007, pp. 1309 - 1312.

 

48.    C.-H. Lin, Y.-J. Yang, E. Encinas, W.-Y. Chen, J.-J. Tsai, and C.W. Liu, “Single crystalline film on glass for thin film solar cells”, 2nd International Conference on Surfaces, Coatings and Nanostructured Materials (NanoSMat 2007), Algarve- PORTUGAL, 9-11 July 2007
.

49.    (invited) C.-H Lin can C. W. Liu, “MOS Si/Ge photodetectors,” in “Optoelectronic Devices: Physics, Fabrication, and Application III” SPIE Symposium 1-4 October 2006, Boston USA

50.    (invited) M. H. Liao, C.-H. Lin, C.-H. Lee, T.-H. Cheng, T.-H. Guo, and C. W. Liu, “Electroluminescence from SiGe based metal-oxide-semiconductor Tunneling Diodes” 210th Meeting of Electrochemical Society, Mexico, Oct. 29-Nov. 3, 2006.

 

51.    C.-H. Lin, C.-Y. Yu, M. H. Liao, C.-F. Huang, C.-J. Lee, C.-Y. Lee, and C. W. Liu, “The Process and Optoelectronic Characterization of Ge-on-Insulator”, 210th Meeting of Electrochemical Society, Mexico, Oct. 29-Nov. 3, 2006, and ECS Transactions – Cancun, vol. 3.

 

52.   M. H. Liao, C.-Y. Yu, C.-F. Huang, C.-H. Lin, C.-J. Lee, M.-H. Yu, S. T. Chang, C.-Y. Liang, C.-Y. Lee, T.-H. Guo, C.-C. Chang, and C. W. Liu, “2 mm emission from Si/Ge heterojunction LED and up to 1.55 mm detection by GOI detector with strain-enhanced features,” 51st International Electron Device Meeting (IEDM), Washington D.C., 2005.

53.    C.-H. Lin, C.-Y. Yu, P.-S. Kuo, C.-C. Chang, and C. W. Liu, “Delta-doped MOS Ge/Si Quantum Dot/Well Infrared Photodetector,” p.322, abstract book, 4th International Conference on Silicon Epitaxy and Heterostructures (ICSI-4), Hyogo, Japan, May 23-26, 2005.

54.    P.-S. Kuo, C.-H. Lin, P. S. Chen, and C. W. Liu, “The current transport mechanism of MOS Photodetector with Pt Gate,” p.220, abstract book, 4th International Conference on Silicon Epitaxy and Heterostructures (ICSI-4), Hyogo, Japan, May 23-26, 2005.

55.    C.-H. Lin, P.-S. Kuo, P. S. Chen, C.-Y. Yu, S. T. Chang, C. W. Liu, “Raising Operation Temperature of MOS Ge/Si Quantum Dot Infrared Photodetectors,” International Electron Devices and Materials Symposia (IEDMS), pp. 277-280, Hsinchu, Taiwan, 2004.

56.    P.-S. Kuo, C.-H. Lin, B.-C. Hsu, P. S. Chen, C. W. Liu, “A Dual-bias Operated MOS Photodetector with Pt Gate,” International Electron Devices and Materials Symposia (IEDMS), pp. 411-414, Hsinchu, Taiwan, 2004.

 

 

 

 

B2: 國內學術會議論文 (REFEREED LOCAL CONFERENCE PAPERS)

1.       Bo-Yu Lin, Chu-Hsuan Lin*, “Current Enhancement by Molybdenum Trioxide for Possible Application on Crystalline Silicon Solar Cells,” 2017 The 12th National Conference on Hydrogen Energy and Fuel Cell (HEFC 2017), The 4rd Taiwan Energy Association Annual Meeting, Hualien, Taiwan, 12-13 October 2017, no. O-C-003.

2.      J.-S. Huang and C.-H. Lin*, “Device simulation and numerical analysis of micromorph tandem solar cells,” Optics and Photonics in Taiwan 2010 (OPT’10), Tainan, Taiwan, 3-4 Dec. 2010.

3.      “Invited” C.-H. Lin, M.-H. Liao, and C. W. Liu,CMOS Optoelectronics,” Symposium on Nano Device Technology (SNDT), 2005.

 

 

*中華民國專利

No.

專利名稱

專利編號

發明人

公告日期

1

太陽能電池的製造方法

I492409

林楚軒;許文慈;蔡宗憲;于鈞天

2015/07/11

1

光偵測器的製造方法

I360232

劉致為;林楚軒;江彥德;徐正璋

2012/03/11

* US Patent (Issued Patent)

No.

Title

Patent Number

Inventors

Issue Date

1

Manufacturing process for a photodetector

US 7,906,360

Chee-Wee Liu; Chu-Hsuan Lin; Ying-Te Chiang;

Chin-Chang Hsu

2011/03/15